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Mos-TechSemiconductorCo.,LTD. P‐Channel Enhancement Mode Field Effect Transistor MT5853 with Schottky Diode FEATURES ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● DFN3X2‐8L package NOTE：The MT5853 is available .
● Super high dense cell design for low RDS(ON)
● Rugged and reliable
● Simple drive requirement
● DFN3X2‐8L package
NOTE：The MT5853 is available in a lead-free package
VDSS ‐20V
PRODUCT SUMMARY
ID RDS(ON) (mΩ) Typ
75@ VGS=‐4.5V
‐3.6A
95 @ VGS=‐2.5V
145 @ VGS=‐1.8V
SCHOTTKY
VKA (V) = 20V, IF = 1A, VF<[email protected]
1206-8 ChipFETt
SK
1
A
K K
A S
DG
D
Bottom View
Marking Code
JA XX
Lot Traceability and Date Code
Part # Code
G
D P-Channel MOSFET
Ordering Information: Si5853DC-T1
ABSOLUTE MAXIMUM RATINGS（TA=25.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MT5853B |
MOS-TECH |
P-Channel Power MOSFET |
|
| 2 | MT5815 |
Maxic Technology |
A High Efficiency Wireless Power Transmitter |
|
| 3 | MT58C1289 |
Micron |
128K x 9 SRAM |
|
| 4 | MT58L128L18D |
Micron Semiconductor |
(MT58LxxxLxxD) 2Mb SRAM |
|
| 5 | MT58L128L18F |
Micron Semiconductor |
(MT58LxxxLxxF) 2Mb SRAM |
|
| 6 | MT58L128L18P |
Micron Semiconductor |
(MT58LxxxxP) 2Mb SRAM |
|
| 7 | MT58L128L32D1 |
Micron Technology |
(MT58LxxxLxxD1) 4Mb SRAM |
|
| 8 | MT58L128L32F1 |
Micron Technology |
(MT58LxxxLxxF1) 4Mb SRAM |
|
| 9 | MT58L128L36D1 |
Micron Technology |
(MT58LxxxLxxD1) 4Mb SRAM |
|
| 10 | MT58L128L36F1 |
Micron Technology |
(MT58LxxxLxxF1) 4Mb SRAM |
|
| 11 | MT58L128V18F |
Micron Semiconductor |
(MT58LxxxLxxF) 2Mb SRAM |
|
| 12 | MT58L128V18P |
Micron Semiconductor |
(MT58LxxxxP) 2Mb SRAM |
|