MT46V64M8 - Micron Technology

MT46V64M8 Double Data Rate (DDR) SDRAM

512Mb: x4, x8, x16 DDR SDRAM Features Double Data Rate (DDR) SDRAM MT46V128M4 – 32 Meg x 4 x 4 banks MT46V64M8 – 16 Meg x 8 x 4 banks MT46V32M16 – 8 Meg x 16 x 4 banks Features • VDD = VDD 2.5V ±0.2V, VDDQ = = 2.6V ±0.1V, VDDQ 2.5V ±0.2V = 2.6V ±0.1V (DDR400)1 • Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous.

Features

Double Data Rate (DDR) SDRAM MT46V128M4
  – 32 Meg x 4 x 4 banks MT46V64M8
  – 16 Meg x 8 x 4 banks MT46V32M16
  – 8 Meg x 16 x 4 banks Features
• VDD = VDD 2.5V ±0.2V, VDDQ = = 2.6V ±0.1V, VDDQ 2.5V ±0.2V = 2.6V ±0.1V (DDR400)1
• Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has two
  – one per byte)
• Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center- al.