These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWM DC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommun.
APPLICATIONS ¾ 60V/4.5A, RDS(ON) = 58mΩ @ VGS = 10V ¾ 60V/4.0A, RDS(ON) = 85mΩ @ VGS = 4.5V ¾ -60V/-3.5A, RDS(ON) = 90mΩ @ VGS = -10V ¾ -60V/-3.0A, RDS(ON) =135mΩ @ VGS = -4.5V ¾ Fast switching speed ¾ SOP-8 & TO-252 package design ¾ Power Management in Note ¾ Portable Equipment ¾ Battery Powered System ¾ Load Switch ¾ LCD Display inverter PIN CONFIGURATION SOP-8 S1 D1 G1 D1 S2 D2 G2 D2 MT4599CM TO-252 D1/D2 12 34 5 S1 G1 S2 G2 MT4599CB D1 D2 G1 G2 S1 S2 - 1 - www.matrix-microtech.com.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MT4505 |
Magn Tek |
High Performance Ratiometric Linear Hall Effect Sensor | |
2 | MT4506 |
Magn Tek |
High Performance Ratiometric Linear Hall Effect Sensor | |
3 | MT4507 |
Magn Tek |
High Performance Ratiometric Linear Hall Effect Sensor | |
4 | MT45W2ML16PFA |
Micron Semiconductor |
(MT45WxMx16PFA) Async Cellularram Memory | |
5 | MT45W2MV16PFA |
Micron Semiconductor |
(MT45WxMx16PFA) Async Cellularram Memory | |
6 | MT45W2MW16B |
Micron Semiconductor |
(MT45W2MW16B / MT45W4MW16B) Burst Cellularram Memory | |
7 | MT45W2MW16BFB |
Micron Semiconductor |
(MT45W2MW16BFB / MT45W4MW16BFB) Burst Cellularram Memory | |
8 | MT45W2MW16PFA |
Micron Semiconductor |
(MT45WxMx16PFA) Async Cellularram Memory | |
9 | MT45W4ML16PFA |
Micron Semiconductor |
(MT45WxMx16PFA) Async Cellularram Memory | |
10 | MT45W4MV16PFA |
Micron Semiconductor |
(MT45WxMx16PFA) Async Cellularram Memory | |
11 | MT45W4MW16B |
Micron Semiconductor |
(MT45W2MW16B / MT45W4MW16B) Burst Cellularram Memory | |
12 | MT45W4MW16BFB |
Micron Semiconductor |
(MT45W2MW16BFB / MT45W4MW16BFB) Burst Cellularram Memory |