MT41K2G4 - Micron Technology

MT41K2G4 TwinDie 1.35V DDR3L SDRAM

TwinDie™ 1.35V DDR3L SDRAM MT41K2G4 – 128 Meg x 4 x 8 Banks x 2 Ranks MT41K1G8 – 64 Meg x 8 x 8 Banks x 2 Ranks Description The 8Gb (TwinDie™) DDR3L SDRAM (1.35V) uses Micron’s 4Gb DDR3L SDRAM die (essentially two ranks of the 4Gb DDR3L SDRAM). Refer to Micron’s 4Gb DDR3 SDRAM data sheet for the specifications not included in this document. Specifications f.

Features

• Uses 4Gb Micron die
• Two ranks (includes dual CS#, ODT, CKE, and ZQ balls)
• Each rank has eight internal banks for concurrent operation
• VDD = V DDQ = 1.35V (1.283
  –1.45V); backward compatible to V DD = V DDQ = 1.5V ±0.075V
• 1.35V center-terminated push/pull I/O
• JEDEC-standard ball-out
• Low-profile package
• TC of 0°C to 95°C
  – 0°C to 85°C: 8192 refresh cycles in 64ms
  – 85°C to 95°C: 8192 refresh cycles in 32ms
  – Industrial temperature (IT) available (Rev. E) Table 1: Key Timing Parameters Speed Grade -107 1, 2, 3 1, 2 -107 -125 -15E -187E None None IT :D/:E Data Rate (MT/s) 1866 160.