DDR3L SDRAM MT41K256M4 – 32 Meg x 4 x 8 banks MT41K128M8 – 16 Meg x 8 x 8 banks MT41K64M16 – 8 Meg x 16 x 8 banks Description The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. Refer to the DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode. Features • VDD = VDDQ = +1.35V (1.283V to 1.45V) • B.
• VDD = VDDQ = +1.35V (1.283V to 1.45V)
• Backward compatible to VDD = VDDQ = 1.5V ±0.075V
• Differential bidirectional data strobe
• 8n-bit prefetch architecture
• Differential clock inputs (CK, CK#)
• 8 internal banks
• Nominal and dynamic on-die termination (ODT)
for data, strobe, and mask signals
• Programmable CAS (READ) latency (CL)
• Programmable CAS additive latency (AL)
• Programmable CAS (WRITE) latency (CWL)
• Fixed burst length (BL) of 8 and burst chop (BC) of 4
(via the mode register set [MRS])
• Selectable BC4 or BL8 on-the-fly (OTF)
• Self refresh mode
• TC of 0°C to 95°C
– 64ms.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MT41K256M16 |
Micron |
Automotive DDR3L SDRAM | |
2 | MT41K256M16 |
Micron Technology |
DDR3L SDRAM | |
3 | MT41K256M8 |
Micron Technology |
1.35V DDR3L SDRAM | |
4 | MT41K2G4 |
Micron Technology |
TwinDie 1.35V DDR3L SDRAM | |
5 | MT41K128M16 |
Micron Technology |
1.35V DDR3L SDRAM | |
6 | MT41K128M8 |
Micron Technology |
Automotive DDR3L SDRAM | |
7 | MT41K1G16 |
Micron Technology |
1.35V DDR3L SDRAM | |
8 | MT41K1G4 |
Micron Technology |
DDR3L SDRAM | |
9 | MT41K1G8 |
Micron Technology |
TwinDie 1.35V DDR3L SDRAM | |
10 | MT41K512M16 |
Micron Technology |
32 Meg x 16 x 8 Banks 1.35V DDR3L-RS SDRAM | |
11 | MT41K512M4 |
Micron Technology |
1.35V DDR3L SDRAM | |
12 | MT41K512M8 |
Micron |
Automotive DDR3L SDRAM |