TwinDie™ 1.2V DDR4 SDRAM MT40A4G4 – 128 Meg x 4 x 16 Banks x 2 Ranks MT40A2G8 – 64 Meg x 8 x 16 Banks x 2 Ranks Description The 16Gb (TwinDie™) DDR4 SDRAM uses Micron’s 8Gb DDR4 SDRAM die (essentially two ranks of the 8Gb DDR4 SDRAM). Refer to Micron’s 8Gb DDR4 SDRAM data sheet for the specifications not included in this document. Specifications for base pa.
• Uses 8Gb Micron die
• Two ranks (includes dual CS#, ODT, and CKE balls)
• Each rank has 4 groups of 4 internal banks for con-
current operation
• VDD = VDDQ = 1.2V (1.14
–1.26V)
• 1.2V VDDQ-terminated I/O
• JEDEC-standard ball-out
• Low-profile package
• TC of 0°C to 95°C
– 0°C to 85°C: 8192 refresh cycles in 64ms
– 85°C to 95°C: 8192 refresh cycles in 32ms
Options.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MT40A1G16 |
Micron |
1.2V DDR4 SDRAM | |
2 | MT40A1G4 |
Micron |
DDR4 SDRAM | |
3 | MT40A1G8 |
Micron |
DDR4 SDRAM | |
4 | MT40A256M16 |
Micron |
Automotive DDR4 SDRAM | |
5 | MT40A2G4 |
Micron |
DDR4 SDRAM | |
6 | MT40A2G8 |
Micron |
1.2V DDR4 SDRAM | |
7 | MT40A512M16 |
Micron |
DDR4 SDRAM | |
8 | MT40A512M8 |
Micron |
Automotive DDR4 SDRAM | |
9 | MT4067-P |
Micron |
256K x 1 DRAM | |
10 | MT4100 |
MCL |
Broadband CW TWT LAB Amplifier | |
11 | MT4102 |
MagnTek |
Hall-Effect Magnetic Position Sensors | |
12 | MT4103-HR |
marktech optoelectronics |
Standar T-1 LED Lamps |