DDR4 SDRAM MT40A1G4 MT40A512M8 MT40A256M16 Features • VDD = VDDQ = 1.2V ±60mV • VPP = 2.5V, –125mV/+250mV • On-die, internal, adjustable VREFDQ generation • 1.2V pseudo open-drain I/O • TC maximum up to 95°C – 64ms, 8192-cycle refresh up to 85°C – 32ms, 8192-cycle refresh at >85°C to 95°C • 16 internal banks (x4, x8): 4 groups of 4 banks each • 8 internal ba.
• VDD = VDDQ = 1.2V ±60mV
• VPP = 2.5V,
–125mV/+250mV
• On-die, internal, adjustable VREFDQ generation
• 1.2V pseudo open-drain I/O
• TC maximum up to 95°C
– 64ms, 8192-cycle refresh up to 85°C
– 32ms, 8192-cycle refresh at >85°C to 95°C
• 16 internal banks (x4, x8): 4 groups of 4 banks each
• 8 internal banks (x16): 2 groups of 4 banks each
• 8n-bit prefetch architecture
• Programmable data strobe preambles
• Data strobe preamble training
• Command/Address latency (CAL)
• Multipurpose register READ and WRITE capability
• Write and read leveling
• Self refresh mode
• Low-power auto self refres.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MT40A1G16 |
Micron |
1.2V DDR4 SDRAM | |
2 | MT40A1G8 |
Micron |
DDR4 SDRAM | |
3 | MT40A256M16 |
Micron |
Automotive DDR4 SDRAM | |
4 | MT40A2G4 |
Micron |
DDR4 SDRAM | |
5 | MT40A2G8 |
Micron |
1.2V DDR4 SDRAM | |
6 | MT40A4G4 |
Micron |
1.2V DDR4 SDRAM | |
7 | MT40A512M16 |
Micron |
DDR4 SDRAM | |
8 | MT40A512M8 |
Micron |
Automotive DDR4 SDRAM | |
9 | MT4067-P |
Micron |
256K x 1 DRAM | |
10 | MT4100 |
MCL |
Broadband CW TWT LAB Amplifier | |
11 | MT4102 |
MagnTek |
Hall-Effect Magnetic Position Sensors | |
12 | MT4103-HR |
marktech optoelectronics |
Standar T-1 LED Lamps |