MT3S46T - Toshiba Semiconductor

MT3S46T Silicon NPN epitaxial planer type Transistor

www.DataSheet4U.com MT3S46T TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S46T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES · · Low Noise Figure :NF=1.2dB (@f=2GHz) High Gain:|S21e| =11.5dB (@f=2GHz) 2 Marking 3 R5 1 2 TESM JEDEC JEITA Characteristics Collector-Base voltage Collector-Emitter voltage Emit.

Features

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· Low Noise Figure :NF=1.2dB (@f=2GHz) High Gain:|S21e| =11.5dB (@f=2GHz) 2 Marking 3 R5 1 2 TESM JEDEC JEITA Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 8 4.5 1.5 40 20 100 150 −55~150 Unit V V V mA mA mW °C °C Maximum Ratings (Ta = 25°C) ― ― 2-1B1A TOSHIBA Weight:0.0022g (typ.) 1 2002-11-14 MT3S46T Microwave Characteristics (Ta = 25°C) Characteristics Transition Frequency Insertion Gain Sy.