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.. 8 Signal Descriptions and Assignments ....... 8 Package Dimensions ......
NAND Flash Memory
MT29F1G08AACWP, MT29F1G08AACH4 MT29F1G08ABCHC, MT29F1G16ABCHC, MT29F1G08ABCH4, MT29F1G16ABCH4 Features
• Open NAND Flash Interface (ONFI) 1.0-compliant1
• Single-level cell (SLC) technology
• Organization
– Page size x8: 2112 bytes (2048 + 64 bytes)
– Page size x16: 1056 words (1024 + 32 words)
– Block size: 64 pages (128K + 4K bytes)
– Device size: 1Gb: 1024 blocks
• Asynchronous I/O performance
– tRC/tWC: 25ns (3.3V), 35ns (1.8V)
• Array performance
– Read page: 25µs
– Program page: 250µs (TYP, 3.3V)
– Program page: 250µs (TYP, 1.8V)
– Erase block: 500µs (TYP)
• Command se.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MT29F1G08AACH4 |
Micron Technology |
NAND Flash Memory |
|
| 2 | MT29F1G08ABADAH4 |
Micron Technology |
NAND Flash Memory |
|
| 3 | MT29F1G08ABADAWP |
Micron Technology |
NAND Flash Memory |
|
| 4 | MT29F1G08ABAEAH4 |
Micron Technology |
NAND Flash Memory |
|
| 5 | MT29F1G08ABAEAH4-IT |
Micron Technology |
NAND Flash Memory |
|
| 6 | MT29F1G08ABAEAWP |
Micron Technology |
NAND Flash Memory |
|
| 7 | MT29F1G08ABAEAWP-IT |
Micron Technology |
NAND Flash Memory |
|
| 8 | MT29F1G08ABB |
Micron Technology |
(MT29F1GxxABB) 1Gb NAND Flash Memory |
|
| 9 | MT29F1G08ABBDAH4 |
Micron Technology |
NAND Flash Memory |
|
| 10 | MT29F1G08ABBDAHC |
Micron Technology |
NAND Flash Memory |
|
| 11 | MT29F1G08ABBEAH4 |
Micron Technology |
NAND Flash Memory |
|
| 12 | MT29F1G08ABBEAH4-IT |
Micron Technology |
NAND Flash Memory |
|