.. 8 Signal Descriptions and Assignments ....... 8 Signal Assignments ......
NAND Flash Memory
MT29F1G08ABADAWP, MT29F1G08ABBDAH4, MT29F1G08ABBDAHC, MT29F1G16ABBDAH4, MT29F1G16ABBDAHC, MT29F1G08ABADAH4 Features
• Open NAND Flash Interface (ONFI) 1.0-compliant1
• Single-level cell (SLC) technology
• Organization
– Page size x8: 2112 bytes (2048 + 64 bytes)
– Page size x16: 1056 words (1024 + 32 words)
– Block size: 64 pages (128K + 4K bytes)
– Device size: 1Gb: 1024 blocks
• Asynchronous I/O performance
– tRC/tWC: 20ns (3.3V), 25ns (1.8V)
• Array performance
– Read page: 25µs3
– Program page: 200µs (TYP, 3.3V and 1.8V)3
– Erase block: 700µs (TYP)
• Command set: ONFI NA.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MT29F1G08ABADAH4 |
Micron Technology |
NAND Flash Memory | |
2 | MT29F1G08ABAEAH4 |
Micron Technology |
NAND Flash Memory | |
3 | MT29F1G08ABAEAH4-IT |
Micron Technology |
NAND Flash Memory | |
4 | MT29F1G08ABAEAWP |
Micron Technology |
NAND Flash Memory | |
5 | MT29F1G08ABAEAWP-IT |
Micron Technology |
NAND Flash Memory | |
6 | MT29F1G08ABB |
Micron Technology |
(MT29F1GxxABB) 1Gb NAND Flash Memory | |
7 | MT29F1G08ABBDAH4 |
Micron Technology |
NAND Flash Memory | |
8 | MT29F1G08ABBDAHC |
Micron Technology |
NAND Flash Memory | |
9 | MT29F1G08ABBEAH4 |
Micron Technology |
NAND Flash Memory | |
10 | MT29F1G08ABBEAH4-IT |
Micron Technology |
NAND Flash Memory | |
11 | MT29F1G08ABBEAHC |
Micron Technology |
NAND Flash Memory | |
12 | MT29F1G08ABBEAHC-IT |
Micron Technology |
NAND Flash Memory |