MT28N20A N N-CHANNEL MOSFET MAIN CHARACTERISTICS Package ID VDSS R(-d@sVogns=-1m0aVx) Qg-typ 28A 200V 85mΩ 52nC DC/DC APPLICATIONS Isolated DC/DC Converters in Telecom and Industrial Synchronous Rectification Automotive UPS Rdson dv/dt RoHS FEATURES Low gate charge Low Rdson Fast switching 100% avalanche.
Low gate charge
Low Rdson
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product
ORDER MESSAGE
Order codes
-
-
-
Halogen-Tube
Halogen-Free-Tube Halogen-Reel
MT28N20A-C-B
MT28N20A-C-BR
N/A
- Halogen-Free-Reel
N/A
Marking
MT28N20A
Package
TO-220C
:202001A
1/7
ABSOLUTE RATINGS (Tc=25℃)
MT28N20A
Parameter
Symbol
- Drain-Source Voltage
VDSS
Drain Current -continuous
ID T=25℃ ID T=100℃
( 1)
Drain Current - pulse
IDM
(note 1)
Gate-Source Voltage
VGSS
( 2)
Single Pulsed Avalanche
EAS
Energy(note 2)
( 1) Avalanche Current (note 1).
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MT2854M16B1LL |
Micron Technology |
FLASH MEMORY | |
2 | MT28C128532W18 |
Micron Technology |
128Mb Multibank Burst Flash 32Mb ASYNC/PAGE CellularRAM COMBO Memory | |
3 | MT28C128532W30D |
Micron Technology |
128Mb Multibank Burst Flash 32Mb ASYNC/PAGE CellularRAM COMBO Memory | |
4 | MT28C128564W18 |
Micron Technology |
128Mb Multibank Burst Flash 32Mb ASYNC/PAGE CellularRAM COMBO Memory | |
5 | MT28C128564W30D |
Micron Technology |
128Mb Multibank Burst Flash 32Mb ASYNC/PAGE CellularRAM COMBO Memory | |
6 | MT28C3212P2 |
MICRON |
FLASH AND SRAM COMBO MEMORY | |
7 | MT28C3214P2FL |
Micron Technology |
FLASH AND SRAM COMBO MEMORY | |
8 | MT28C3214P2NFL |
Micron Technology |
FLASH AND SRAM COMBO MEMORY | |
9 | MT28C3224P18 |
Micron Technology |
FLASH AND SRAM COMBO MEMORY | |
10 | MT28C3224P20 |
Micron Technology |
FLASH AND SRAM COMBO MEMORY | |
11 | MT28C6428P18 |
Micron Technology |
FLASH AND SRAM COMBO MEMORY | |
12 | MT28C6428P20 |
Micron Technology |
FLASH AND SRAM COMBO MEMORY |