MT28C3224P20 - Micron Technology

MT28C3224P20 FLASH AND SRAM COMBO MEMORY

The MT28C3224P20 and MT28C3224P18 combination Flash and SRAM memory devices provide a compact, low-power solution for systems where PCB real estate is at a premium. The dual-bank Flash devices are high-performance, high-density, nonvolatile memory with a revolutionary architecture that can significantly improve system performance. This new architecture featu.

Features

• Flexible dual-bank architecture
• Support for true concurrent operations with no latency: Read bank b during program bank a and vice versa Read bank b during erase bank a and vice versa
• Organization: 2,048K x 16 (Flash) 256K x 16 (SRAM)
• Basic configuration: Flash Bank a (8Mb Flash for data storage)
  – Eight 4K-word parameter blocks
  – Fifteen 32K-word blocks Bank b (24Mb Flash for program storage)
  – Forty-eight 32K-word main blocks SRAM 4Mb SRAM for data storage
  – 256K-words
• F_VCC, VCCQ, F_VPP, S_VCC voltages MT28C3224P20 1.80V (MIN)/2.20V (MAX) F_VCC read voltage 1.80V (MIN)/2.20V (MAX).