MSC81035M - STMicroelectronics

MSC81035M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

The MSC81035M is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications. This device is a direct replacement for the MSC1035M. MSC81035M offers improved saturated ouput power and collector efficiency based on the test circuit described herein. Low RF thermal resistance and computerized automatic wire bonding technique.

Features

C TJ T STG Power Dissipation
* Device Current
* (TC ≤ 100°C) 150 3.0 55 250 − 65 to +200 W A V °C °C Collector-Supply Voltage
* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance
* 1.0 °C/W
*Applies only to rated RF amplifier operation Note: Thermal Resistance determined by Infra-Red Scanning of Hot-Spot Junction Temperature at rated RF operating conditions. September 2, 1994 1/4 MSC81035M ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCER ICES hFE DYNAMIC.