MSC81005 - STMicroelectronics

MSC81005 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

The MSC81005 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. The MSC81005 is designed for Class C amplifier applications in the 0.4 - 1.

Features

age
* Junction Temperature Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance
* 8.0 °C/W
*Applies only to rated RF amplifier operation October 1992 1/5 MSC81005 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCER I CBO hFE DYNAMIC Symbol IC = 1mA IE = 1mA IC = 5mA VCB = 28V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω IC = 200mA 45 3.5 45 — 15 — — — — — — — — 1.0 120 V V V mA — Test Conditions Value Min. Typ. Max. Unit POUT ηc GP COB f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1 MHz PIN = 0.5 W PIN = 0.