MSC49N60X - Bruckewell

MSC49N60X 40V N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching.

Features

• 40V,140A, RDS(ON) =2.8mΩ@VGS = 10V
• Improved dv/dt capability
• Fast switching
• Green Device Available
• RoHS compliant package Applications
• MB / VGA / Vcore
• POL Applications
• SMPS 2nd SR PPAK5X6 Pin Configuration Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID IDM EAS Drain Current - Continuous (TC=25°C) (Chip Limitation) Drain Current - Continuous (TC=100°C) (Chip Limitation) Drain Current - Pulsed1 Single Pulse Avalanche Energy2 Value.