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MSC49N60X |
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| Part Number | MSC49N60X |
| Manufacturer | Bruckewell |
| Description | These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superio... |
| Features |
• 40V,140A, RDS(ON) =2.8mΩ@VGS = 10V • Improved dv/dt capability • Fast switching • Green Device Available • RoHS compliant package Applications • MB / VGA / Vcore • POL Applications • SMPS 2nd SR PPAK5X6 Pin Configuration Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID IDM EAS Drain Current - Continuous (TC=25°C) (Chip Limitation) Drain Current - Continuous (TC=100°C) (Chip Limitation) Drain Current - Pulsed1 Single Pulse Avalanche Energy2 Value... |
| Document |
 MSC49N60X Data Sheet
PDF 555.88KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MSC49N02X |
Bruckewell |
40V N-Channel MOSFETs |
|
| 2 | MSC4953W |
MORESEMI |
Dual P-Channel MOSFET |
|
| 3 | MSC4963W |
MORESEMI |
Dual P-Channel Enhancement Mode Power MOS FET |
|
| 4 | MSC4000 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS |
|
| 5 | MSC4001 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS |
|