700V, 15 mΩ N-Channel mSiC™ MOSFET MSC015SMA070B4 Product Overview 700V, 15 mΩ typical at 20 VGS, 18 mΩ typical at 18 VGS, Silicon Carbide (SiC) N-Channel MOSFET, TO-247 4-lead with a source sense. Features • Low capacitances and low gate charge • Fast switching speed due to low internal gate resistance (ESR) • Stable operation at high junction temperature,.
• Low capacitances and low gate charge
• Fast switching speed due to low internal gate resistance (ESR)
• Stable operation at high junction temperature, TJ(max) = 175 °C
• Fast and reliable body diode
• Superior avalanche ruggedness
• RoHS compliant Benefits
• High efficiency to enable lighter and more compact system
• Simple to drive and easy to parallel
• Improved thermal capabilities and lower switching losses
• Eliminates the need for external freewheeling diode
• Lower system cost of ownership Applications
• Photovoltaic (PV) inverter, converter, and industrial motor drives
• Smart grid t.
MSC015SMA070B4 Silicon Carbide N-Channel Power MOSFET 1 Product Overview The silicon carbide (SiC) power MOSFET produ.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MSC015SMA070B |
Microsemi |
Silicon Carbide N-Channel Power MOSFET | |
2 | MSC015SMA070B |
Microchip |
N-Channel MOSFET | |
3 | MSC015SDA120B |
Microsemi |
Zero Recovery Silicon Carbide Schottky Diode | |
4 | MSC010SDA070B |
Microchip |
Zero Recovery Silicon Carbide Schottky Diode | |
5 | MSC010SDA070BCT |
Microchip |
10A Silicon Carbide Schottky Dual Diode | |
6 | MSC010SDA070K |
Microchip |
Zero Recovery Silicon Carbide Schottky Diode | |
7 | MSC010SDA070S |
Microchip |
Zero Recovery Silicon Carbide Schottky Diode | |
8 | MSC010SDA120B |
Microsemi |
Zero Recovery Silicon Carbide Schottky Diode | |
9 | MSC010SDA170B |
Microsemi |
Zero Recovery Silicon Carbide Schottky Diode | |
10 | MSC017SMA120B |
Microchip |
N-Channel MOSFET | |
11 | MSC0203S |
MORESEMI |
N/P-Channel Power MOSFET | |
12 | MSC0205W |
MORESEMI |
Dual N-Channel MOSFET |