MSAGZ52F120A - Microsemi Corporation

MSAGZ52F120A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM(25) ICM(90) EAS IC(sc) IC(sc)RBSOA PD Tj Tstg IS ISM θJC MAX. 1200 1200 +/-20 +/-30 52 33 104 66 65 260 66 300 -55 to +150 -55 to +150 50 100 0.4 COLLECTOR UNIT Volts Volts Volts Volts Amps Amps mJ A A Watts °C °C Amps Amps °C/W Collect.

Features

•
•
•
•
•
•
•
• Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSAH(G)Z52F120B high frequency IGBT, low switching losses anti-parallel FREDiode (MSAHZ52F120A only) Maximum Ratings @ 25° C (unless otherwise specified) DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM(25) ICM(90) EAS IC(sc) IC(sc)RBSOA PD Tj Tstg IS ISM θJC MAX. 1200 1.