Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
MSAGZ52F120A |
Click to view a larger image
| Part Number | MSAGZ52F120A |
| Manufacturer | Microsemi (https://www.microsemi.com/) Corporation |
| Description | Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM(25) ICM(90) EAS IC(sc) IC(sc)RBSOA PD Tj Tstg IS ISM θJC MAX. 1200 1200 +/-20 ... |
| Features |
• • • • • • • • Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSAH(G)Z52F120B high frequency IGBT, low switching losses anti-parallel FREDiode (MSAHZ52F120A only) Maximum Ratings @ 25° C (unless otherwise specified) DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM(25) ICM(90) EAS IC(sc) IC(sc)RBSOA PD Tj Tstg IS ISM θJC MAX. 1200 1... |
| Document |
 MSAGZ52F120A Data Sheet
PDF 69.99KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MSAGA11F120D |
Microsemi Corporation |
Fast IGBT Die |
|
| 2 | MSAGX60F60A |
Microsemi Corporation |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
|
| 3 | MSAGX75F60A |
Microsemi Corporation |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
|
| 4 | MSAGX75L60A |
Microsemi Corporation |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
|
| 5 | MSA-0100 |
Hewlett-Packard |
Cascadable Silicon Bipolar MMIC Amplifier |
|