MS808C06 - Fuji Electric

MS808C06 Schottky Barrier Diode

www.DataSheet4U.com MS808C06 (30A) SCHOTTKY BARRIER DIODE 9.0±0.2 7.0±0.2 4 0.6±0.2 0.1 (60V / 30A ) Outline drawings, mm 10.1±0.3 9.0±0.2 Solder Plating 2.0 1.5 2.0 2.5 0.5±0.2 (5.8) 1 1.0±0.2 1.0±0.2 2 3 0.4±0.1 3.6±0.2 Features Low VF Super high speed switching High reliability by planer design 2.8±0.2 (4.0) (0.8) (3.2) Connection diagr.

Features

Low VF Super high speed switching High reliability by planer design 2.8±0.2 (4.0) (0.8) (3.2) Connection diagram Applications High speed power switching 1 2 4 3 Maximum ratings and characteristics Absolute maximum ratings Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Io IFSM Tj Tstg tw=500ns, duty=1/40 Square wave, duty=1/2 Tc=118°C Sine wave 10ms Conditions Rating 60 60 30
* 200 -40 to +150 -40 to +150 Unit V V A A °C °C
* Average forward current of centert.