Microsemi’s MS8000 series of GaAs Schottky barrier diodes are available in packaged form and bondable chip configurations. These Schottky devices have low series resistance and low junction capacitance. The resulting low noise figure makes these diodes suitable for sensitive mixer and detector applications from below X band to beyond Ka band frequencies. Ord.
● Low-Noise Performance
● High Cut-off Frequency
● Passivated to Enhance Reliability
● Packaged Diodes and Bondable Chips
Applications
● Single and Balanced Mixers and Detectors
● Transceivers X, K and Ka Bands
● 30 and 60 GHz Radios
● Automotive Radar Detectors
Maximum Ratings
Incident Power
Forward Current Reverse Voltage Operating Temperature Storage Temperature
100 mW @ 25°C Derate Linearly to 0 at 175°C
15 mA @ 25°C 5V -55°C to +175°C -55°C to +200°C
Description
Microsemi’s MS8000 series of GaAs Schottky barrier diodes are available in packaged form and bondable chip configurations. .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MS8001 |
Microsemi |
GaAs Schottky Diodes | |
2 | MS8002 |
Microsemi |
GaAs Schottky Diodes | |
3 | MS8003 |
Microsemi |
GaAs Schottky Diodes | |
4 | MS80 |
Diotec Semiconductor |
Surface Mount Si-Bridge-Rectifiers | |
5 | MS8051 |
Ruimeng |
CMOS Operational Amplifier | |
6 | MS8052 |
Ruimeng |
CMOS Operational Amplifier | |
7 | MS8054 |
Ruimeng |
CMOS Operational Amplifier | |
8 | MS808C06 |
Fuji Electric |
Schottky Barrier Diode | |
9 | MS809 |
Infineon Technologies |
(MS809 / MS845) Schottky Diodes | |
10 | MS8100 |
Microsemi Corporation |
(MS8180 - MS8100) 8 Amp Schottky Rectifier | |
11 | MS8100 |
Micro Commercial Components |
(MS820 - MS8100) 8 Amp Schottky Barrier Rectifier | |
12 | MS8104160 |
OKI electronic componets |
Dual FIFO |