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The MS3383 is a common base, hermetically sealed silicon NPN microwave power transistor. This device is designed for Class C applications in the 1 - 3 GHz frequency range. Gold metallization and emitter ballasting provide long term reliability and superior ruggedness. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol PDISS VCC IC TJ T STG Parameter Power Dis.
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GOLD METALIZATION POUT = 1.0 W MINIMUM 3.0 GHz GP = 7.0 dB INFINITE VSWR CAPABLE @ RATED CONDITIONS HERMETIC PACKAGE COMMON BASE CONFIGURATION
DESCRIPTION:
The MS3383 is a common base, hermetically sealed silicon NPN microwave power transistor. This device is designed for Class C applications in the 1 - 3 GHz frequency range. Gold metallization and emitter ballasting provide long term reliability and superior ruggedness.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
PDISS VCC IC TJ T STG
Parameter
Power Dissipation
* Collector-Supply Voltage
* Device Curre.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MS3302 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS |
|
| 2 | MS3303 |
Microsemi |
RF & MICROWAVE TRANSISTORS |
|
| 3 | MS3303H |
ETC |
USB to COM |
|
| 4 | MS3320 |
ETC |
MS3320 |
|
| 5 | MS33537E |
ETC |
Insert Screw |
|
| 6 | MS33588 |
Military Standard |
Nuts |
|
| 7 | MS3367-5-9 |
Military-Fasteners |
CABLE TIE |
|
| 8 | MS3003 |
ON Semiconductor |
P-Channel Power MOSFET |
|
| 9 | MS3004 |
ON Semiconductor |
P-Channel Power MOSFET |
|
| 10 | MS3057A |
Glenair |
Straight Non-Self-Locking Strain Relief |
|
| 11 | MS3100 |
MegaPlus |
High Resolution 3-Chip Digital Smart Camera |
|
| 12 | MS3102 |
Microsemi |
RF Microwave Transistors |
|