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Ordering number : ENA1908B BMS3004 P-Channel Power MOSFET –75V, –68A, 8.5mΩ, TO-220F-3SG http://onsemi.com Features • ON-resistance RDS(on)1=6.5mΩ (typ.) • Input capacitance Ciss=13400pF (typ.) • 4V drive TO-220F-3SG Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Curr.
• ON-resistance RDS(on)1=6.5mΩ (typ.)
• Input capacitance Ciss=13400pF (typ.)
• 4V drive
TO-220F-3SG
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS ID IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse)
*1
EAS
Avalanche Current
*2
IAV
Note :
*1 VDD=--48V, L=100μH, IAV=--54A (Fig.1)
*2 L≤100μH, Single pulse
Conditions
PW≤10μs, duty cycle≤1% Tc=25°C
Ratings
Unit
--75
V
±20
V
--68
A
--272
A
.
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