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The MS1007 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-B.
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• 30 MHz 50 VOLTS POUT = 150 WATTS GP = 14 dB MINIMUM COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1007 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C)
Symbol
VCBO VCEO VEBO IC PDISS TJ T STG
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
Value
110 55 4.0 10 233 +200 -65 to +150
Unit
V .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MS1000 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
|
| 2 | MS1001 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
|
| 3 | MS1003 |
Microsemi Corporation |
10 AMP SCHOTTKY BARRIER RECTIFIERS |
|
| 4 | MS1003 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
|
| 5 | MS1003SH |
Shindengen |
Quasi-Resonant Power Supply ICs |
|
| 6 | MS1004 |
Microsemi Corporation |
10 AMP SCHOTTKY BARRIER RECTIFIERS |
|
| 7 | MS1004 |
INCHANGE |
Schottky Barrier Rectifier |
|
| 8 | MS1004SH |
Shindengen |
Quasi-Resonant Power Supply ICs |
|
| 9 | MS1005 |
Microsemi Corporation |
10 AMP SCHOTTKY BARRIER RECTIFIER |
|
| 10 | MS1006 |
Microsemi Corporation |
10 AMP SCHOTTKY BARRIER RECTIFIER |
|
| 11 | MS1006 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS |
|
| 12 | MS1007SH |
Shindengen |
Quasi-Resonant Power Supply ICs |
|