1 Absolute Maximum Ratings (at Tc=25℃) 1 (at Tc=25℃) 1-1 Thermal Ratings 1-1 Item Storage temperature Junction temperature Total power dissipation 1-2 Electrical Ratings 1-2 Item Vin maximum applied voltage Vin Vin reverse bias voltage Vin VCC maximum applied voltage VCC VCC reverse bias voltage VCC Z/C into maximum current Z/C F/B into maximum curren.
nt Z/C Symbol Top Vin VCC IZ/C Recommended value min typ max Unit -20 --- 125 ℃ 95 --- 450 V 11 --- 24 V -4.5 --- 4.5 mA Notes : The product life depends on the condition of use even within the above operating conditions. Using at Tj = 100℃ or less is recommended for the equipment where a long life is expected. Refer to the electrical characteristic mentioned in item 3-4 regarding the operation during super standby, since the operation conditions reccommended as above is the conditions during regular operation. : 、、 、 Tj=100℃。 3-1 Electrical/Thermal Characteristics (at Ta=25℃).
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MS1004 |
Microsemi Corporation |
10 AMP SCHOTTKY BARRIER RECTIFIERS | |
2 | MS1004 |
INCHANGE |
Schottky Barrier Rectifier | |
3 | MS1000 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS | |
4 | MS1001 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS | |
5 | MS1003 |
Microsemi Corporation |
10 AMP SCHOTTKY BARRIER RECTIFIERS | |
6 | MS1003 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS | |
7 | MS1003SH |
Shindengen |
Quasi-Resonant Power Supply ICs | |
8 | MS1005 |
Microsemi Corporation |
10 AMP SCHOTTKY BARRIER RECTIFIER | |
9 | MS1006 |
Microsemi Corporation |
10 AMP SCHOTTKY BARRIER RECTIFIER | |
10 | MS1006 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS | |
11 | MS1007 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS | |
12 | MS1007SH |
Shindengen |
Quasi-Resonant Power Supply ICs |