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Part Number C1 2.2 pF Chip Capacitor ATC600F2R2BT250XT C2, C7, C8, C14, C20, C21 15 pF Chip Capacitors ATC600F150JT250XT C3, C4, C5, C6 C16, C17, C18, C19 1.0 pF Chip Capacitors ATC600F1R0BT250XT C9, C10, C22, C23 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L C11, C12 47 μF, 35 V Electrolytic Capacitors 476KXM050M C13 0.6 pF Chip Capacitor.
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF8S18260HR6 MRF8S18260HSR6
1805--1880 MHz, 74 W AVG., 30 V SINGLE W--CDMA
LATERAL N--CHANNEL RF POWER MOSFETs
CASE 375I--04 NI.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF8S18260HR6 |
Freescale Semiconductor |
RF Power Field Effect Transistors |
|
| 2 | MRF8S18210WGHSR3 |
Freescale Semiconductor |
RF Power Field Effect Transistors |
|
| 3 | MRF8S18210WHSR3 |
Freescale Semiconductor |
RF Power Field Effect Transistors |
|
| 4 | MRF8S18120HR3 |
Freescale Semiconductor |
RF Power Field Effect Transistors |
|
| 5 | MRF8S18120HSR3 |
Freescale Semiconductor |
RF Power Field Effect Transistors |
|
| 6 | MRF8S19140HR3 |
Freescale Semiconductor |
RF Power Field Effect Transistors |
|
| 7 | MRF8S19140HSR3 |
Freescale Semiconductor |
RF Power Field Effect Transistors |
|
| 8 | MRF8S21140HR3 |
NXP |
RF Power Field Effect Transistors |
|
| 9 | MRF8S21140HSR3 |
NXP |
RF Power Field Effect Transistors |
|
| 10 | MRF8S21200HR6 |
Freescale Semiconductor |
RF Power Field Effect Transistors |
|
| 11 | MRF8S21200HSR6 |
Freescale Semiconductor |
RF Power Field Effect Transistors |
|
| 12 | MRF8S26060HR3 |
Motorola Semiconductor |
RF Power Field Effect Transistors |
|