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2.2 μF Chip Capacitors Part Number C3225X7R2A225M C3, C4, C5, C6, C7, C8 10 μF Chip Capacitors C5750X7S2A106MT C9, C10, C11, C12, C13, C14 8.2 pF Chip Capacitors ATC100B8R2BT500XT C15 1.3 pF Chip Capacitor ATC100B1R3BT500XT C16, C21 1.8 pF Chip Capacitors ATC100B1R8BT500XT C17 2.0 pF Chip Capacitor ATC100B2R0BT500XT C18, C19 3.9 pF Chip Capaci.
• Designed for Wide Instantaneous Bandwidth Applications
• Designed for Wideband Applications that Require 40 MHz Signal Bandwidth
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF8S18210WHSR3 |
Freescale Semiconductor |
RF Power Field Effect Transistors |
|
| 2 | MRF8S18260HR6 |
Freescale Semiconductor |
RF Power Field Effect Transistors |
|
| 3 | MRF8S18260HSR6 |
Freescale Semiconductor |
RF Power Field Effect Transistors |
|
| 4 | MRF8S18120HR3 |
Freescale Semiconductor |
RF Power Field Effect Transistors |
|
| 5 | MRF8S18120HSR3 |
Freescale Semiconductor |
RF Power Field Effect Transistors |
|
| 6 | MRF8S19140HR3 |
Freescale Semiconductor |
RF Power Field Effect Transistors |
|
| 7 | MRF8S19140HSR3 |
Freescale Semiconductor |
RF Power Field Effect Transistors |
|
| 8 | MRF8S21140HR3 |
NXP |
RF Power Field Effect Transistors |
|
| 9 | MRF8S21140HSR3 |
NXP |
RF Power Field Effect Transistors |
|
| 10 | MRF8S21200HR6 |
Freescale Semiconductor |
RF Power Field Effect Transistors |
|
| 11 | MRF8S21200HSR6 |
Freescale Semiconductor |
RF Power Field Effect Transistors |
|
| 12 | MRF8S26060HR3 |
Motorola Semiconductor |
RF Power Field Effect Transistors |
|