MRF6P18190HR6 RF Power Field Effect Transistor Datasheet

MRF6P18190HR6 RF Power Field Effect Transistor

Short RF Beads 0.6 - 4.5 pF Variable Capacitor 5.6 pF Chip Capacitors 7.5 pF Chip Capacitors 1K pF Chip Capacitors 1 µF, 50 V Tantalum Capacitors 0.1 µF Chip Capacitors 100 µF, 50 V Electrolytic Capacitors, Radial 6.8 pF Chip Capacitors 0.56 µF Chip Capacitors (1825) 22 µF, 35 V Tantalum Capacitors 470 µF, 63 V Electrolytic Capacitors, Radial 0.4 - 2.5 pF Va.

Features

um of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. MRF6P18190HR6 1805 - 1880 MHz, 44 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFET CASE 375D - 05, STYLE 1 NI - 1230 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction T.

No.	Partie #	Fabricant	Description
1	MRF6P21190HR6	Freescale Semiconductor	RF Power Field Effect Transistor
2	MRF6P23190HR6	Freescale Semiconductor	RF Power Field Effect Transistor
3	MRF6P24190HR6	Freescale Semiconductor	RF Power Field Effect Transistor
4	MRF6P27160HR6	Freescale Semiconductor	RF Power Field Effect Transistor
5	MRF6P3300HR3	Freescale Semiconductor	N-Channel MOSFET
6	MRF6P3300HR5	Freescale Semiconductor	N-Channel MOSFET
7	MRF6P9220HR3	Freescale Semiconductor	RF Power Field Effect Transistor
8	MRF604	Motorola	HIGH FREQUENCY TRANSISTOR
9	MRF604	Advanced Semiconductor	NPN SILICON RF POWER TRANSISTOR
10	MRF607	Motorola	HIGH FREQUENCY TRANSISTOR
11	MRF607	Advanced Power Technology	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
12	MRF607	Microsemi Corporation	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF6P18190HR6 - Freescale Semiconductor

MRF6P18190HR6 RF Power Field Effect Transistor

Features

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