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MRF6P18190HR6 |
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| Part Number | MRF6P18190HR6 |
| Manufacturer | Freescale Semiconductor |
| Description | Short RF Beads 0.6 - 4.5 pF Variable Capacitor 5.6 pF Chip Capacitors 7.5 pF Chip Capacitors 1K pF Chip Capacitors 1 µF, 50 V Tantalum Capacitors 0.1 µF Chip Capacitors 100 µF, 50 V Electrolytic Capac... |
| Features |
um of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • Low Gold Plating Thickness on Leads, 40µ″ Nominal. • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. MRF6P18190HR6 1805 - 1880 MHz, 44 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFET CASE 375D - 05, STYLE 1 NI - 1230 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction T... |
| Document |
 MRF6P18190HR6 Data Sheet
PDF 487.09KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MRF6P21190HR6 |
Freescale Semiconductor |
RF Power Field Effect Transistor |
|
| 2 | MRF6P23190HR6 |
Freescale Semiconductor |
RF Power Field Effect Transistor |
|
| 3 | MRF6P24190HR6 |
Freescale Semiconductor |
RF Power Field Effect Transistor |
|
| 4 | MRF6P27160HR6 |
Freescale Semiconductor |
RF Power Field Effect Transistor |
|
| 5 | MRF6P3300HR3 |
Freescale Semiconductor |
N-Channel MOSFET |
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