MRF455 RF POWER TRANSISTOR Datasheet

MRF455 RF POWER TRANSISTOR

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF455/D NPN Silicon RF Power Transistor . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 60 Watts Minimum Gain = 13 dB Efficiency = 55% MATCHING PROCEDURE I.

Features

25°C Storage Temperature Range Symbol VCEO VCES VEBO IC PD Tstg Value 18 36 4.0 15 175 1.0
  – 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C MRF455 60 W, 30 MHz RF POWER TRANSISTOR NPN SILICON CASE 211
  –07, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 1.0 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector
  –Emitter Breakdown Voltage (IC = 100 mAdc, IB = 0) Collector
  –Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Emitter
  –Base Breakdown Voltage (IE.

The same part from a different manufacturer

MRF455 - MACOM

at any time, without notice. MACOM makes no commitment to update the information and shall have no responsibility whats.

MRF455 - HGSemi

The MRF455 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for land mobile transmitter ap.

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MRF455 - Motorola