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SEMICONDUCTOR TECHNICAL DATA Order this document by MRF428/D The RF Line NPN Silicon RF Power Transistor MRF428 Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 Volt, 30 MHz Characteristics — Output Power = 150 W (PEP) Minimum Gain = 13 DB Ef.
ymbol RθJC Max 0.5 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO 55 110 110 4.0 — — — — — — — — Vdc Vdc Vdc Vdc (continued) 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25 °C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF421 |
Tyco Electronics |
The RF Line NPN Silicon RF Power Transistor |
|
| 2 | MRF421 |
Motorola |
RF POWER TRANSISTORS |
|
| 3 | MRF422 |
Motorola |
RF POWER TRANSISTORS |
|
| 4 | MRF422 |
Tyco Electronics |
The RF Line NPN Silicon RF Power Transistor |
|
| 5 | MRF422 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR |
|
| 6 | MRF422 |
MA-COM |
The RF Line NPN Silicon Power Transistor |
|
| 7 | MRF422MP |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR |
|
| 8 | MRF426 |
Motorola |
RF POWER TRANSISTOR |
|
| 9 | MRF426 |
Tyco Electronics |
The RF Line NPN Silicon RF Power Transistor |
|
| 10 | MRF427 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR |
|
| 11 | MRF429 |
Motorola |
RF POWER TRANSISTOR |
|
| 12 | MRF429 |
Tyco Electronics |
RF POWER TRANSISTOR |
|