MR36V08G57C P2ROM262,144–Page × 1,024 x 32–Bit (LVNROM) FEDR36V08G57C-002-02 Issue Date: Sep. 15, 2010 FEATURES Memory Configuration • 262,144 x 1,024 x 32 bit • Multiplexed Command/Address/Data Page Read Operation • Page Size : 4,096 byte • Random access time : 1.0us (max) for block read 1.8us (max) for random read • Sequential Read : 40ns (min).
Memory Configuration
• 262,144 x 1,024 x 32 bit
• Multiplexed Command/Address/Data
Page Read Operation
• Page Size
: 4,096 byte
• Random access time : 1.0us (max) for block read
1.8us (max) for random read
• Sequential Read : 40ns (min)
• Read Mode
Continuous Read : no wait for next page.
Page Read
: need wait time for next page
Power Supply Voltage
• Vcc = 3.0 V to 3.6 V
PACKAGES
·70-pin plastic SSOP (P-SSOP70-500-0.80-EK-MC)
P2ROM ADVANCED TECHNOLOGY
P2ROM stands for Production Programmed ROM. This exclusive LAPIS Semiconductor’s technology utilizes factory test equipment f.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MR36V01G52B |
LAPIS |
P2ROM | |
2 | MR36V02G54B |
LAPIS |
P2ROM | |
3 | MR36V04G54B |
LAPIS |
P2ROM | |
4 | MR36V04G54S |
LAPIS |
P2ROM | |
5 | MR300 |
Vishay |
Wirewound Resistor | |
6 | MR301 |
NEC Electronics |
Twin Relay | |
7 | MR301 |
Vishay |
Wirewound Resistor | |
8 | MR301-xxxx |
NEC Electronics |
Twin Relay | |
9 | MR302 |
Vishay |
Wirewound Resistor | |
10 | MR3025 |
ON Semiconductor |
Medium-Current Silicon Rectifiers | |
11 | MR303 |
Vishay |
Wirewound Resistor | |
12 | MR304 |
Vishay |
Wirewound Resistor |