MPS3646 - Motorola

MPS3646 Switching Trasnistor(NPN Silicon)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPS3646/D Switching Transistor NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MPS3646 Motorola Preferred Device 1 2 3 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous — 10 ms Pulse Total Dev.

Features

eakdown Voltage (IC = 100 mAdc, VBE = 0) Collector
  – Emitter Sustaining Voltage(1) (IC = 10 mAdc, IB = 0) Collector
  – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter
  – Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) (VCE = 20 Vdc, VBE = 0, TA = 65°C) 1. Pulse Test: Pulse Width V(BR)CES VCEO(sus) V(BR)CBO V(BR)EBO ICES — — 0.5 3.0 40 15 40 5.0 — — — — Vdc Vdc Vdc Vdc mAdc v 300 ms; Duty Cycle v 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small
  –Signal Transistors, FETs and Diod.