MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPS3640/D Switching Transistor PNP Silicon MPS3640 COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC.
(1) (IC =
–10 mAdc, IB = 0) Collector
– Base Breakdown Voltage (IC =
–100 mAdc, IE = 0) Emitter
– Base Breakdown Voltage (IE =
–100 mAdc, IC = 0) Collector Cutoff Current (VCE =
–6.0 Vdc, VBE = 0) (VCE =
–6.0 Vdc, VBE = 0, TA = 65°C) Base Current (VCE =
–6.0 Vdc, VEB = 0) 1. Pulse Test: Pulse Width V(BR)CES VCEO(sus) V(BR)CBO V(BR)EBO ICES — — IB —
–0.01
–1.0
–10 nAdc
–12
–12
–12
–4.0 — — — — Vdc Vdc Vdc Vdc µAdc
v 300 ms, Duty Cycle v 2.0%.
Motorola Small
–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996
1
MPS3640
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MPS3646 |
Motorola |
Switching Trasnistor(NPN Silicon) | |
2 | MPS3646 |
ON Semiconductor |
Switching Transistor | |
3 | MPS3638 |
Fairchild Semiconductor |
PNP Small Signal General Purpose Amplifiers & Switches | |
4 | MPS3638 |
Motorola |
Switching Transistors | |
5 | MPS3638A |
Motorola |
Switching Transistor | |
6 | MPS3638A |
SEMTECH |
PNP Silicon Epitaxial Planar Transistor | |
7 | MPS3638A |
Fairchild Semiconductor |
PNP Small Signal General Purpose Amplifiers & Switches | |
8 | MPS3638A |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
9 | MPS3638A |
CHINA BASE |
PNP Silicon Epitaxial Planar Transistor | |
10 | MPS3638A |
ON Semiconductor |
PNP SIlicon Switching Transistor | |
11 | MPS3150 |
BOWEI |
Fixecd PLL synthesizer | |
12 | MPS3330 |
BOWEI |
Fixecd PLL synthesizer |