MP4506 - Toshiba Semiconductor

MP4506 Power Transistor

www.DataSheet4U.com MP4506 TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Four Darlington Power Transistors inOne) MP4506 High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching Industrial Applications Unit: mm • • • • Package with heat sink isolated to lead (SIP 12 pins) High collector power diss.

Features

JEDEC JEITA TOSHIBA ― ― 2-32B1B Weight: 6.0 g (typ.) Array Configuration 2 5 4 8 9 12 11 1 R1 R2 3 6 R2 ≈ 200 Ω 7 10 R1 ≈ 5 kΩ 1 2004-07-01 MP4506 Marking MP4506 JAPAN Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Thermal Characteristics Characteristics Thermal resistance from junction to ambient (4-device operation, Ta = 25°C) Thermal resistance from junction to case (4-device operation, Tc = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) TL 260 °C ΣRth (j-c) 5.0 °C/W Symbol Max Un.