MP4503 - Toshiba

MP4503 Power Transistor

MP4503 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1) MP4503 High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Industrial Applications Unit: mm · · · · Package with heat sink isolated to lead (SIP 12 pin) High collector power dissipation (4 devices operatio.

Features

V A A W JEDEC JEITA TOSHIBA ― ― 2-32B1C Weight: 6.0 g (typ.) Array Configuration R1 R2 7 8 9 2 1 11 4 12 5 R1 R2 R1 ≈ 4.5 kΩ 6 R2 ≈ 300 Ω 1 2002-11-20 MP4503 Thermal Characteristics Characteristics Thermal resistance of junction to ambient (4 devices operation, Ta = 25°C) Thermal resistance of junction to case (4 devices operation, Tc = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) ΣRth (j-c) 5.0 °C/W Symbol Max Unit ΣRth (j-a) 25 °C/W TL 260 °C Electrical Characteristics (Ta = 25°C) (NPN transistor) Characteristics Collector cut-off curr.