August 2016 MMN400A006U1 60V 400A N-ch Power MOSFET Module Preliminary RoHS Compliant PRODUCT FEATURES □ RDS(ON).typ=0.35mΩ@VGS=10V □ 175℃operating temperature □ Low Gate Charge Minimize Switching Loss □ Fast Recovery body Diode □ 20K Ω Gate Protected Resistance Inside □ Inside the module,each MOSFET chip has a gate resistance:2.2Ω APPLICATIONS □ High .
□ RDS(ON).typ=0.35mΩ@VGS=10V □ 175℃operating temperature □ Low Gate Charge Minimize Switching Loss □ Fast Recovery body Diode □ 20K Ω Gate Protected Resistance Inside □ Inside the module,each MOSFET chip has a gate resistance:2.2Ω APPLICATIONS □ High efficiency DC/DC Converters □ ISG EV Products □ UPS inverter Type MMN400A006U1 VDS 60V ID 400A RDS(ON).max TJ=25℃ 0.75mΩ TJmax 175℃ Marking MMN400A006U1 Package NA ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VDSS Drain - Source Voltage TJ=25℃ VGSS Gate - Source Voltage ID Continuou.
August 2016 MMN400A006U1 60V 400A N-ch Power MOSFET Module Preliminary RoHS Compliant PRODUCT FEATURES □ RDS(ON).ty.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MMN400A010U1 |
MacMic |
100V 400A N-ch Power MOSFET | |
2 | MMN1000DB010B |
MacMic |
MOSFET | |
3 | MMN1000DB010B |
MacMic |
100V 1000A N-ch Power MOSFET | |
4 | MMN200H010X |
MacMic |
MOSFET | |
5 | MMN2616 |
ETC |
2048 x 8-BIT EPROM/PROM | |
6 | MMN2716 |
ETC |
2048 x 8-BIT EPROM/PROM | |
7 | MMN550WB025B |
MacMic |
MOSFET | |
8 | MMN600DB012B |
MacMic |
N-ch Power MOSFET | |
9 | MMN600DB015B |
MacMic |
MOSFET | |
10 | MMN600DB015B |
MacMic |
150V 600A N-ch Power MOSFET | |
11 | MMN668A010U1 |
MacMic |
MOSFET | |
12 | MMN668A010U1 |
MacMic |
100V 668A N-ch Power MOSFET |