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March 2016 PRODUCT FEATURES ƶ RDS(ON).typ=0.57mȍ@VGS=10V ƶ 175ćoperating temperature ƶ Low Gate Charge Minimize Switching Loss ƶ Fast Recovery body Diode ƶ 10K ȍ Gate Protected Resistance Inside MMN1000DB010B 100V 1000A N-ch Power MOSFET Module Preliminary RoHS Compliant APPLICATIONS ƶ High efficiency DC/DC Converters ƶ Synchronous Rectifier Type MMN10.
ƶ RDS(ON).typ=0.57mȍ@VGS=10V ƶ 175ćoperating temperature ƶ Low Gate Charge Minimize Switching Loss ƶ Fast Recovery body Diode ƶ 10K ȍ Gate Protected Resistance Inside MMN1000DB010B 100V 1000A N-ch Power MOSFET Module Preliminary RoHS Compliant APPLICATIONS ƶ High efficiency DC/DC Converters ƶ Synchronous Rectifier Type MMN1000DB010B VDS 100V ID 1000A RDS(ON).max TJ=25ć 0.75mȍ TJmax 175ć Marking MMN1000DB010B Package NDB ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VDSS Drain - Source Voltage TJ=25ć VGSS Gate - Source Voltage .
MMN1000DB010B - MacMic
March 2016 PRODUCT FEATURES ƶ RDS(ON).typ=0.57mȍ@VGS=10V ƶ 175ćoperating temperature ƶ Low Gate Charge Minimize Switchin.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MMN200H010X |
MacMic |
MOSFET |
|
| 2 | MMN2616 |
ETC |
2048 x 8-BIT EPROM/PROM |
|
| 3 | MMN2716 |
ETC |
2048 x 8-BIT EPROM/PROM |
|
| 4 | MMN400A006U1 |
MacMic |
MOSFET |
|
| 5 | MMN400A006U1 |
MacMic |
60V 400A N-ch Power MOSFET |
|
| 6 | MMN400A010U1 |
MacMic |
100V 400A N-ch Power MOSFET |
|
| 7 | MMN550WB025B |
MacMic |
MOSFET |
|
| 8 | MMN600DB012B |
MacMic |
N-ch Power MOSFET |
|
| 9 | MMN600DB015B |
MacMic |
MOSFET |
|
| 10 | MMN600DB015B |
MacMic |
150V 600A N-ch Power MOSFET |
|
| 11 | MMN668A010U1 |
MacMic |
MOSFET |
|
| 12 | MMN668A010U1 |
MacMic |
100V 668A N-ch Power MOSFET |
|