MMF60R360QTH - INCHANGE

MMF60R360QTH N-Channel MOSFET

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor MMF60R360QTH ·FEATURES ·Low power loss ·High speed switching ·Low on-resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Motor control ·DC – DC converters ·Adapter ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃).

Features

·Low power loss
·High speed switching
·Low on-resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Switching applications
·Motor control
·DC
  – DC converters
·Adapter
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 11 7 33 PD Total Dissipation 30 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃
·THERMAL CHARACT.