MMF60R115P is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss. Key Parameters Parameter VDS @ Tj,.
Low Power Loss by High Speed Switching and Low On-Resistance
100% Avalanche Tested
Green Package
– Pb Free Plating, Halogen Free
Applications
PFC Power Supply Stages
Switching Applications
Adapter
Ordering Information
Order Code MMF60R115PTH
Marking 60R115P
Temp. Range -55 ~ 150oC
Package TO-220F
Packing Tube
RoHS Status Compliant
Jun. 2021 Revision 1.4
1
Magnachip Semiconductor Ltd.
MMF60R115P Datasheet
Absolute Maximum Rating (Tc=25oC unless otherwise specified)
Parameter Drain
– Source voltage Gate
– Source voltage
Symbol VDSS VGSS
Continuous drain current .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MMF60R190P |
MagnaChip |
N-channel MOSFET | |
2 | MMF60R190Q |
MagnaChip |
N-Channel MOSFET | |
3 | MMF60R190R |
MagnaChip |
N-channel MOSFET | |
4 | MMF60R280Q |
MagnaChip |
N-channel MOSFET | |
5 | MMF60R290P |
MagnaChip |
N-channel MOSFET | |
6 | MMF60R360P |
MagnaChip |
N-channel MOSFET | |
7 | MMF60R360P |
INCHANGE |
N-Channel MOSFET | |
8 | MMF60R360Q |
MagnaChip |
N-Channel MOSFET | |
9 | MMF60R360QTH |
INCHANGE |
N-Channel MOSFET | |
10 | MMF60R360RZ |
MagnaChip |
N-channel MOSFET | |
11 | MMF60R580P |
MagnaChip |
N-channel MOSFET | |
12 | MMF60R580P |
INCHANGE |
N-Channel MOSFET |