MMDFS6N303R2 - ON Semiconductor

MMDFS6N303R2 Power MOSFET

MMDFS6N303 Power MOSFET 6 Amps, 30 Volts N−Channel SO−8, FETKYt The FETKY product family incorporates low RDS(on), true logic level MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers to offer high efficiency components in a space saving configuration. Independent pinouts for MOSFET and Schottky die allow the fl.

Features

• Power MOSFET with Low VF
• Lower Component Placement and Inventory Costs along with Board Space Savings
• Logic Level Gate Drive — Can be Driven by Logic ICs
• Mounting Information for SO−8 Package Provided
• Applications Information Provided
• R2 Suffix for Tape and Reel (2500 units/13″ reel)
• Marking: 6N303 MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1) Rating Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MW) Gate−to−Source Voltage — Continuous Drain Current (Note 2) − Continuous @ TA = 25°C − Single Pulse (tp v 10 ms) Total Power Dissipation @ TA = 25°C (N.