MMDFS3P303 - ON

MMDFS3P303 Power MOSFET

MMDFS3P303 Power MOSFET 3 Amps, 30 Volts P–Channel SO–8, FETKYt The FETKY product family incorporates low RDS(on), MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers to offer high efficiency components in a space saving configuration. Independent pinouts for MOSFET and Schottky die allow the flexibility to use a.

Features

s otherwise noted) (Notes 1. & 2.) Rating Drain
  –to
  –Source Voltage Drain
  –to
  –Gate Voltage (RGS = 1.0 MW) Gate
  –to
  –Source Voltage
  – Continuous Drain Current
  – Continuous @ TA = 25°C
  – Continuous @ TA = 100°C
  – Single Pulse (tp v 10 ms) Total Power Dissipation @ TA = 25°C (Note 3.) Symbol VDSS VDGR VGS ID ID IDM PD Value 30 30 "20 3.5 2.25 12 2.0 Unit Vdc Vdc Vdc Adc Apk Watts 1 L Y WW = Location Code = Year = Work Week 8 SO
  –8 CASE 751 STYLE 18 6N303 LYWW http://onsemi.com 3 AMPERES 30 VOLTS RDS(on) = 100 mW VF = 0.42 Volts P
  –Channel D G S MARKING DIAGRAM PIN ASSIGNMENT Anode Anode Source Gate.