MMDF4P03HDR2 - ON Semiconductor

MMDF4P03HDR2 Power MOSFET

MMDF4P03HD Preferred Device Power MOSFET 4 A, 30 V, P−Channel SO−8, Dual Dual MOSFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc−dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless pho.

Features

nt − Continuous @ TA = 25°C Drain Current − Single Pulse (tp ≤ 10 ms) Source Current − Continuous @ TA = 25°C Total Power Dissipation @ TA = 25°C (Note 1) VDSS VGS ID IDM IS PD 30 Vdc ± 20 Vdc 4.0 Adc 20 Apk 1.7 Adc 2.0 Watts Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 W) Thermal Resistance − Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, (1/8″ from Case for 10 s) EAS RθJA TL 450 mJ 62.5 °C/W 260 °C Str.