MMDF4P03HD - Motorola

MMDF4P03HD Dual MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF4P03HD/D Advance Information Medium Power Surface Mount Products MMDF4P03HD Motorola Preferred Device TMOS Dual P-Channel Field Effect Transistors Dual HDTMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process. Dual HDTMOS devices are .

Features

Speed, With Soft Recovery IDSS Specified at Elevated Temperature Mounting Information for SO
  –8 Package Provided ™ DUAL TMOS POWER MOSFET 30 VOLTS RDS(on) = 85 mW D G S D CASE 751
  –05, Style 11 SO
  –8 Source
  –1 Gate
  –1 Source
  –2 G S Gate
  –2 1 2 3 4 8 7 6 5 Drain
  –1 Drain
  –1 Drain
  –2 Drain
  –2 Top View MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain
  –to
  –Source Voltage Gate
  –to
  –Source Voltage — Continuous Drain Current — Continuous @ TA = 25°C Drain Current — Single Pulse (tp ≤ 10 µs) Source Current — Continuous @ TA = 25°C Total Power Dissipation @ TA = 25°C (1) Operating and Storag.