MMDF3N02HD - Motorola

MMDF3N02HD Dual MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF3N02HD/D Designer's ™ Data Sheet Medium Power Surface Mount Products MMDF3N02HD Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surf.

Features

lanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
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• DUAL TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS RDS(on) = 0.090 OHM ™ D CASE 751
  –05, Style 11 SO
  –8 G S Source
  –1 Gate
  –1 Source
  –2 Gate
  –2 Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive — Can Be Driven by Logic ICs Miniature SO
  –8 Surface Mount Package — Saves Board Space Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery .