MMDF2P02HD - Motorola

MMDF2P02HD Dual MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF2P02HD/D Designer's ™ Data Sheet Medium Power Surface Mount Products MMDF2P02HD Motorola Preferred Device TMOS P-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface m.

Features

e energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
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• DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS RDS(on) = 0.160 OHM ™ D CASE 751
  –05, Style 11 SO
  –8 G S Source
  –1 Gate
  –1 Source
  –2 Gate
  –2 1 2 3 4 8 7 6 5 Drain
  –1 Drain
  –1 Drain
  –2 Drain
  –2 Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive — Can Be Driven by Logic ICs Miniature SO
  –8 Surface Mount Package — Saves Board Space Diode Is Characterized for Use In Bridge Circuits Diode .