MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF2P01HD/D Designer's ™ Data Sheet Medium Power Surface Mount Products MMDF2P01HD Motorola Preferred Device TMOS P-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface m.
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DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS RDS(on) = 0.18 OHM
™
D
G S
CASE 751
–05, Style 11 SO
–8
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive — Can Be Driven by Logic ICs Miniature SO
–8 Surface Mount Package — Saves Board Space Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Mounting Information for SO
–8 Package Provided
Source
–1 Gate
–1 Source
–2 Gate
–2
1 2 3 4
8 7 6 5
Drain
–1 Drain
–1 Drain
–2 Drain
–2
Top View
MAXIMUM RATINGS (TJ = 25°C unless otherwi.
MMDF2P01HD Preferred Device Power MOSFET 2 Amps, 12 Volts P−Channel SO−8, Dual These miniature surface mount MOSFETs fea.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MMDF2P02E |
Motorola |
Dual MOSFET | |
2 | MMDF2P02E |
ON Semiconductor |
Power MOSFET | |
3 | MMDF2P02HD |
Motorola |
Dual MOSFET | |
4 | MMDF2P02HD |
ON Semiconductor |
Power MOSFET | |
5 | MMDF2P03HD |
ON Semiconductor |
Power MOSFET | |
6 | MMDF2C01HD |
Motorola |
Dual MOSFET | |
7 | MMDF2C02E |
Motorola |
Dual MOSFET | |
8 | MMDF2C02E |
ON Semiconductor |
Power MOSFET | |
9 | MMDF2C02ER2 |
ON Semiconductor |
Power MOSFET | |
10 | MMDF2C02HD |
Motorola |
Dual MOSFET | |
11 | MMDF2C02HD |
ON Semiconductor |
Power MOSFET | |
12 | MMDF2C03HD |
Motorola |
Dual MOSFET |