MMDF2N02E - Motorola

MMDF2N02E Dual MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF2N02E/D Designer's ™ Data Sheet Medium Power Surface Mount Products MMDF2N02E DUAL TMOS MOSFET 3.6 AMPERES 25 VOLTS RDS(on) = 0.1 OHM TMOS Dual N-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniat.

Features

avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
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• ® D G S CASE 751
  –05, Style 11 SO
  –8 Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive — Can Be Driven by Logic ICs Miniature SO
  –8 Surface Mount Package — Saves Board Space Diode Is Characterized for Use In Bridge Circuits IDSS Specified at Elevated Temperatures Avalanche Energy Specified Mounting Information for SO
  –8 Package Provided Source
  –1 Gate
  –1 Source
  –2 G.