MMBFJ110 - ON Semiconductor

MMBFJ110 N-Channel JFET

N-Channel JFET MMBFJ110 Features • This Device is Designed for Digital Switching Applications where Very Low On Resistance is Mandatory • Sourced from Process 58 • This is a Pb−Free Device MAXIMUM RATINGS (TA = 25°C unless otherwise specified) (Notes 1, 2) Symbol Parameter Value Unit VDG Drain−Gate Voltage 25 V VGS Gate−Source Voltage −25 V IGF.

Features

• This Device is Designed for Digital Switching Applications where Very Low On Resistance is Mandatory
• Sourced from Process 58
• This is a Pb−Free Device MAXIMUM RATINGS (TA = 25°C unless otherwise specified) (Notes 1, 2) Symbol Parameter Value Unit VDG Drain−Gate Voltage 25 V VGS Gate−Source Voltage −25 V IGF Forward Gate Current 10 mA TJ Junction Temperature 150 °C TJ, TSTG Storage Temperature Range −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be as.