MMBFJ108 - ON Semiconductor

MMBFJ108 N-Channel JFET

N-Channel JFET J109, MMBFJ108 Features • This Device is Designed for Digital Switching Applications where Very Low On Resistance is Mandatory • Sourced from Process 58 • These are Pb−Free Devices MAXIMUM RATINGS (TA = 25°C unless otherwise specified) (Notes 1, 2) Symbol Parameter Value Unit VDG VGS IGF TJ, TSTG Drain−Gate Voltage Gate−Source Voltage.

Features

• This Device is Designed for Digital Switching Applications where Very Low On Resistance is Mandatory
• Sourced from Process 58
• These are Pb−Free Devices MAXIMUM RATINGS (TA = 25°C unless otherwise specified) (Notes 1, 2) Symbol Parameter Value Unit VDG VGS IGF TJ, TSTG Drain−Gate Voltage Gate−Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range 25 V −25 V 10 mA −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage.